Industry - Chargerlab

HYASIC PD Fast Charging Solution & Technical Advantages Introduction

Joey — Thu, 08 May 2025 10:43:09 +0000

If you wanna buy the tester of ChargerLAB POWER-Z, you can visit our Amazon store:
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France: Click here

Introduction
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Recently, we invited Larry Huang, PD Controller International Business Manager from Hyasic, to introduce their PD fast charging solution and technical advantages—let’s take a look.

How Semiconductor Companies Choose the Best Domain Names and Examples of Excellent Domain Names

Ellen — Tue, 20 Aug 2024 01:00:00 +0000

Introduction

There’s a popular saying in the industry: “A domain name is more important than a CEO.” No matter how powerful a company is, it cannot succeed without a domain name. Without a domain name and an internet presence, even the most reputable company will struggle to expand globally, limiting its growth prospects. Why are domain names so crucial for successful companies? Because a domain name helps businesses connect to the internet, link with the world, and build a strong brand!

Since a domain name is essentially the “address” where users find a company, a great domain name should naturally be as short as possible and highly related to the brand. This makes it easier for users to remember and locate the company. ChargerLAB has compiled a list of outstanding domain names in the semiconductor industry, which are not only the online identity of these companies but also serve as a bridge for communication and interaction with global users.

Examples of Excellent Domain Names

ChargerLAB has gathered information on the domain names of several well-known semiconductor companies to provide some reference.

Cmsemicon（mcu.com.cn）

Founded in 2001, Cmsemicon is an IC Design Platform Company with MCUs as the Core, focusing on the R&D, design and sales of digital-analog mixed-signal chips and analog chips. The main products include 8bit, 32bit MCU, SoC, ASIC and power devices, etc., which are widely used in Household appliances, Consumer electronics, Industrial control (including brushless motor control) and Automotive electronics.

Headquartered in Shenzhen, Cmsemicon is a national high-tech enterprise with a registered capital of 400.365 million yuan and more than 350 employees. It has R&D centers and branches in Beijing, Shanghai, Zhongshan, Chengdu, Chongqing, Hangzhou and Singapore.

Since its establishment, Cmsemicon has carried out technical layout around the chips and underlying algorithms required for intelligent controllers, and has continuously expanded its independent design capabilities. At present, the chip development platform with MCU as the core has been completed, and the structured and modular development of the chip has been realized. It has the design capabilities of 8-bit and 32-bit MCU, high-precision simulation, power drive, power devices, radio frequency and underlying core algorithms, can respond quickly to different segments.

As an IC design platform company with MCUs at its core, the company registered the domain mcu.com.cn, using a product category name as its domain, which is simple and easy to remember. In addition, Cmsemicon also owns company-related domains such as cmsemicon.com.cn and cmsemi.com.cn.

GlobalFoundries（gf.com）

GF is one of the world’s leading semiconductor manufacturers and the only one with a truly global footprint.

GF is redefining innovation and semiconductor manufacturing by developing feature-rich process technology solutions that provide leadership performance in pervasive high growth markets.

As a steadfast partner, with a unique mix of design, development and fabrication services, GF works collaboratively alongside our customers to bring a broad range of innovative products to market. With a global customer base, a talented and diverse workforce and an at-scale manufacturing footprint spanning three continents, GF is delivering a new era of more.

The domain gf.com is an abbreviation of GlobalFoundries. The company also owns the brand-related domain GlobalFoundries.com, among others.

NXP（nxp.com）

NXP Semiconductors N.V. (NASDAQ: NXPI) is the trusted partner for innovative solutions in the automotive, industrial & IoT, mobile, and communications infrastructure markets. NXP's "Brighter Together" approach combines leading-edge technology with pioneering people to develop system solutions that make the connected world better, safer, and more secure.

In addition to owning the domain nxp.com, the company also registered nxp.com.cn and nxp.cn domains.

OSRAM（ams.com）

OSRAM pioneers differentiating light and sensor solutions. Looking back on more than 100 years of industry experience, OSRAM combines engineering excellence and global manufacturing capabilities with passion for cutting-edge innovation. OSRAM's commitment to pushing the boundaries of illumination, visualization, and sensing has earned us the trust of customers worldwide. Together, OSRAM creates break-through applications that make the world safer, smarter, and more sustainable.

“Sense the power of light” – OSRAM's success is based on the deep understanding of the potential of light. OSRAM harnesses its full spectrum – visible and invisible – to illuminate our surroundings as well as gather information from them. By adding intelligence to light, OSRAM enables customers to drive transformative applications.

OSRAM's distinct portfolio of advanced light and sensor technologies sets them apart in the industry. It includes high-quality semiconductor-based light emitters, sensors, CMOS ICs and software as well as a range of traditional lighting technologies for automotive and special applications.

OSRAM's around 20,000 employees worldwide focus on innovation alongside the societal megatrends of digitalization, smart living, energy efficiency, and sustainability. OSRAM's light and sensor technologies are setting industry standards in the automotive, industrial, medical and consumer electronics markets. This is reflected in OSRAM's global portfolio of some 14,000 patents and patent applications. Headquartered in Premstaetten/Graz (Austria) and Munich (Germany), the group achieved EUR 3.6 billion revenues in 2023.

The company uses ams.com as the domain for its official website. This concise and memorable domain effectively reflects the core elements of the company’s brand and enhances brand recognition.

Power Integrations（power.com）

Power Integrations, Inc., is a leading innovator in semiconductor technologies for high-voltage power conversion. Products are key building blocks in the clean-power ecosystem, enabling the generation of renewable energy as well as the efficient transmission and consumption of power in a vast range of applications including appliances, mobile devices, computers and countless industrial applications.

Energy-saving technologies such as PowiGaN gallium-nitride technology and EcoSmart energy-efficiency technology prevent billions of kilowatt-hours of energy waste each year, while the highly integrated chips save billions of electronic components each year. Reflecting the environmental benefits of products, Power Integrations' stock is a component of clean-technology stock indices sponsored by Cleantech Group LLC and Clean Edge, and Green Room provides a comprehensive guide to energy-efficiency standards around the world.

Besides owning the domain power.com, the company also registered powerint.cn.

ST（ST.com）

ST is creators and makers of semiconductor technologies. ST works with customers and partners to design and build products, solutions, and ecosystems that address their challenges and opportunities, and the need to support a more sustainable world.

The company directly uses its name as its domain, making it straightforward and clear. Along with the domain ST.com, it also registered st.com.cn, stmicroelectronics.cn, and stmicroelectronics.com.cn.

TI（Ti.com）

TI is a global semiconductor company that designs, manufactures, tests and sells analog and embedded processing chips. TI's approximately 80,000 products help over 100,000 customers efficiently manage power, accurately sense and transmit data and provide the core control or processing in their designs, going into markets such as industrial, automotive, personal electronics, communications equipment and enterprise systems.

TI were pioneers in the transition of the world from vacuum tubes to transistors and then to integrated circuits – and TI has been advancing semiconductor technology for decades. Each generation of innovation builds upon the last to make technology smaller, more efficient, more reliable and more affordable – making it possible for semiconductors to go into electronics everywhere.

The company uses its name as its official website domain, which effectively enhances brand recognition and authority. This domain choice also helps achieve higher rankings in search engine optimization (SEO), further expanding its influence in the global market. In addition to owning the domain Ti.com, the company also registered Ti.com.cn.

Summary of ChargerLAB

ChargerLAB consulted well-known domain name investment experts, who offered their insights on domain name investment, planning, and protection for companies.

The shorter the domain name, the better. In the absence of special circumstances, it is preferable to choose the top-level domain .com. This is because the .com domain name originates from the English word “commercial,” indicating its original intent for registration by commercial organizations. Therefore, .com domains are favored by many business companies worldwide. Additionally, .com is one of the earliest top-level domains and accounts for a significant market share among all registered domain names globally. The .com domain is the most common and popular top-level domain, with no geographical or linguistic restrictions, making it the universal choice for global business.

A good domain name not only helps attract more traffic and clicks but is also easier to promote and remember. As website traffic increases, the brand effect of the domain name will gradually emerge, which is why some domain names are sold at exorbitant prices.

PD3.1 Supported | Legendary Launched LDR6020 Chip Series

Joey — Tue, 22 Aug 2023 10:24:33 +0000

Introduction

In May 2021, the USB-IF Association unveiled the all-new USB PD3.1 specification, escalating the rapid charging power cap from 100W to 240W. This augmentation in charging capability has extended the applications of USB PD beyond smartphones and laptops, encompassing IoT devices, smart homes, communication and security apparatus, EVs, and medical equipment.

With this broader range of applications, the market's expectations for PD protocol chips have surged. Addressing multi-port USB PD implementations, Legendary has launched the groundbreaking LDR6020 series, which features three sets of six-channel CC USB PD3.1 controllers. These chips provide advanced USB PD3.1 support, integrating multifunctional modules and flexible firmware upgrades. They are suitable for a wide spectrum of applications and offer efficient energy management, ensuring a reliable and stable solution for fast charging and data transmission scenarios.

USB PD3.1 Controller - LDR6020

The LDR6020 is a 16-bit RISC MCU equipped with three sets of six-channel DRP USB-C and PD communication protocol modules, as well as a USB2.0 Device module. With USB PD3.1 communication capability, it can handle 262-byte non-collapsed PD3.1 long data packet communications. The chip supports online firmware upgrades through CC, UART, I2C, and USB2.0 modes.

Furthermore, it boasts 13 ADC channels, 28 dual-directional I/O ports, 1 input port, and 2 PWM channels, facilitating customized designs. In the future, an embedded cloud IDE development system will also be introduced. The chip is packaged in a QFN-32 4x4 format.

This controller finds extensive applications, such as in USB-C multifunctional adapters, USB-C monitors, and USB-C power banks. It includes an embedded I2C Slave and a UART communication control unit for intercommunication with other master control chips.

Legendary has designed the PD tester PD09 based on the LDR6020, which can trigger protocols like SPR, EPR, PPS, AVS, and QC. This tester is ideal for engineers to perform functional tests during device debugging. Interested engineers can apply for this tester for free on their official website.

USB PD3.1 PMU Based on SIP Technology - LDR6020P

The LDR6020P is a power management Unit (PMU) based on SIP technology, integrating three sets of six-channel DRP USB-C and PD communication protocol modules. It features two 20V VBUS MOSFETs and a 16-bit RISC MCU, with a resistance range of 15 milliohms (VGS>10V) to 22 milliohms (VGS>5V).

Inside, it houses LDOs and two 20V high-voltage P-Channel MOSFETs. A single MOSFET can handle an actual operating current of up to 5A. When used in series, it is recommended to limit it to 3A to consider temperature rise concerns.

Through SIP technology, the LDR6020P integrates the PD Controller and Power MOSFET on a single chip, substantially reducing external components. This simplifies circuit board layout, saves PCB space, cuts costs, and enhances overall system reliability and stability, providing efficient power management and control capabilities for USB PD3.1 applications.

Additionally, this PMU includes power management and can do 5V LDO output, capable of supplying up to 30mA. It adopts a QFN-48 5x5 package.

It features a built-in USB 2.0 Billboard, houses 32MHz and 32KHz oscillators, and incorporates a 48M USB2.0 high-precision oscillator. It comprehensively supports DFP, UFP, try.SRC, and try.SNK roles.

In applications like dual-port portable displays, the LDR6020P simplifies circuit design, eliminating the need for multiple external MOSFETs. The chip's built-in two 20V high-voltage VBUS MOSFETs handle power management directly. This not only conserves circuit board space but also reduces costs significantly.

Summary of ChargerLAB

The LDR6020 series chips stand out as highlights in the realm of USB PD3.1 protocol applications due to their exceptional features and functionalities. With a highly integrated design, they amalgamate USB PD controllers and Power MOSFETs into a single chip, greatly simplifying circuit design, saving space and costs. These chips support charging power up to 240W, catering to a wide range of applications. They also boast flexible firmware upgrade capabilities and efficient energy management, delivering a dependable solution for various application scenarios.

Legendary has consistently focused on the design and development of USB-C port control chips. In 2015, a year ahead of most peers, they pioneered the development of USB-C port control chip products and have maintained continuous iterative development, consistently staying at the forefront of advanced technology. After years of accumulated technical expertise, Legendary presents the LDR6020 series with sincerity. These chips represent a bold innovation, offering us numerous surprises. It introduces fresh perspectives in USB-C product design and opens up new possibilities in wired interconnectivity for multiple devices.

For iPhone 15 | ConvenientPower Launches Three Qi2 MPP Wireless Charging Modules

Joey — Sun, 20 Aug 2023 01:04:00 +0000

Introduction

Recently, ConvenientPower has launched three wireless charging modules based on the Qi2 standard with MPP (Magnetic Power Profile). In terms of output, these modules support 15W-MPP, 5W-BPP (Baseline Power Profile), and 7.5W-non-MPP wireless charging for iPhones. As for input, they support PD3.1, QC3.0, and 9V DC power supply, allowing customers to connect corresponding wires based on the protocol they use.

Customers only need to design the casing according to the module's dimensions, and the absence of a cover design makes it adaptable to a wider range of wireless charging products, meeting integrated design requirements. While meeting magnetic strength and charging efficiency, the product maintains exceptional consistency.

ConvenientPower MPP Transmitter Modules

ConvenientPower currently offers three MPP transmitter modules: CPS812X, CPS822X, and CPS823X. Notably, the dimensions of CPS822X and CPS823X modules are similar to those of Apple's C222X and C223X, enabling customers to quickly launch products without the need for new molds.

All three ConvenientPower MPP modules are designed with magnetic technology and incorporate the CPS8200 wireless charging controller, boost circuit, and full-bridge power MOSFET. The wireless charging controller integrates three drivers, supporting PD, QC, and DC power. The back of the module has reserved solder points for wire connections. Assembling the casing turns it into a complete magnetic wireless charger. The product has been fully developed, performance test reports are available, and bulk orders can be initiated.

Efficiency is high with the magnetic module, as evidenced by the 140-minute charging time for an MPP iPhone 14 Pro, which is similar to the Apple original module.

With no offset and no protective case, the system efficiency can exceed 80%.

ChargerLAB has obtained the ConvenientPower C812X wireless charging module, and we will now showcase the details using this module as a representative example.

The wireless charging module's front has a coverless design, with a coil in the center and a circle of magnets on the edge for phone attachment.

The back of the module features a metal cover, with components placed in the raised center.

The diameter of this wireless charging module from ConvenientPower is about 56mm (2.20 inches).

The thickness is about 6.5mm (0.26 inches).

This is how it looks like on my hand.

And the weight is about 32g (1.13 oz).

A magnetic material is adhered to the center of the coil.

The coil is wound with Litz wire and consists of 11 turns.

Magnets on the edge of the wireless charging coil are closely aligned for effective attachment.

The power solder points, from left to right, are positive, CC, DPDM, and I2C interfaces, with the negative terminal on the right. The module integrates various protections such as undervoltage, overvoltage, and overcurrent.

Summary of ChargerLAB

ConvenientPower's wireless charging module incorporates the wireless charging controller, boost circuit, and full-bridge power MOSFET, supporting PD, QC, and DC power. By connecting wires through the backside solder points and assembling the casing, it becomes a complete wireless charger. The product has been fully developed, performance test reports are available, and bulk orders can be initiated.

With the upcoming release of the iPhone 15 series, the demand for new Qi2 wireless charging products is substantial. By utilizing ConvenientPower's wireless charging module, the design of wireless charging products can be streamlined, offering performance similar to Apple's original modules. The use of ConvenientPower's wireless module simplifies the product development and certification process, meeting the demands of large-scale production, and accelerating their market launch.

Breaking News: iPhone 15's USB-C Port and the Revelation of a Mystery Chip!

Joey — Wed, 16 Aug 2023 06:33:16 +0000

Introduction

As the 2023 Apple Fall Event draws closer, the leaks surrounding the iPhone 15 are becoming more frequent. In February, rumors emerged that the iPhone 15 would transition from the Lightning port to the USB-C port. In May, ChargerLAB learned from industry sources that the iPhone 15 would support 15W wireless fast charging. On August 15th, ChargerLAB received another leak about the iPhone 15 featuring a USB-C female socket equipped with Thunderbolt/USB4 Retimer chip.

iPhone 15 Series Speculation Renders

iPhone 15 Series USB-C Female Socket Exposed!

According to fix Apple (@lipilipsi), this exposed USB-C female socket pertains to three models: the iPhone 15 Pro Max, iPhone 15 Plus, and iPhone 15. The internal plastic sheets reveal a consistent layout on both sides, comprising a total of 24 pins. Notably, the power supply pins GND and VBUS have longer lengths than the other data pins, indicating the standard USB-C configuration.

The small PCB employs an ultra-thin L-shaped design, featuring six fixing holes for the USB-C female socket. This design enhances stability and prevents detachment or damage caused by twisting after inserting cables.

iPhone 15 May Support Thunderbolt/USB4 High-Speed Transmission

In addition to the revelation of the iPhone 15's port design, a mysterious IC is faintly visible behind the USB-C female socket. Upon magnification, it becomes apparent that this IC is a Retimer chip. This suggests that multiple models within the iPhone 15 series will support Thunderbolt/USB4's high-speed 40Gbps data transmission.

The Retimer chip primarily serves to reconstruct signals and reduce signal jitter. This chip, commonly found in ChargerLAB's disassembled Thunderbolt/USB4 high-speed devices, improves signal transmission stability for high-bandwidth data ports, enabling longer transmission distances.

In the leaked images, the Retimer chip is found on small PCBs for all three model variants, indicating that at least three iPhone 15 models will incorporate Thunderbolt/USB4's 40Gbps high-speed data transmission feature.

Summary of ChargerLAB

With this revelation, the debate over whether the iPhone 15 would switch from the Lightning to the USB-C port has come to an end. With only a month left until Apple's September Fall Event, questions about changes in charging power, device certification requirements, and potential limitations will be addressed.

After changing to the USB-C port, although it is currently unknown whether Apple will introduce a certification mechanism similar to MFi, judging by the abundance of USB-C related devices, USB-C has already become quite mature. This significantly elevates the compatibility of the iPhone 15 with peripherals. Additionally, the inclusion of the high-speed Retimer chip could transform the iPhone 15 into a personal smart terminal, similar to laptops and tablets, providing seamless connectivity via a high-speed docking station for all peripherals, and ultra-high-resolution projection. In terms of charging, it also improves compatibility with USB PD fast charging devices.

Furthermore, from the consumer and industry perspectives, the incorporation of a high-speed USB-C port in the iPhone 15 significantly reduces accessory costs. Given the iPhone's shipment volume and user base, it might even drive the development of the Thunderbolt/USB4 high-speed device market.

After the release of the iPhone 15 series, only AirPods and entry-level iPads will continue using the Lightning port, making them stand out as exceptions. It is likely that their subsequent models will also transition to the USB-C port. In conclusion, let us bid farewell to the Lightning port, as the era of USB-C iPhones is truly on the horizon.

A 100-200W Wireless Charging System With the Same Width of Size as the E-scooter & E-Bike Pole

Joey — Wed, 09 Aug 2023 01:27:56 +0000

Introduction

Due to the technical threshold and market demand, Hainan Qizhong New Energy Co., Ltd. And JASONSPOWER Co., Ltd. (hereinafter referred to JASONSPOWER) have been established, dedicated to the development of personal transportation (non e-car) wireless charging system. The picture below shows several types of personal transportation.

Background

The 100W-class wireless charging system has been tried to be commercialized many times in the past years, but none of them have been successfully promoted wildly. There were below issues to prevent the 100W-class wireless charging system from being widely applied.

1. Size: Too big, generally the size of an opened book.

2. Efficiency: The conversion efficiency of the system is only about 85%, especially since the receiving end needs a special cooling device. When the output is 100W, it needs to generate more than 18W of heat, and most of them are at the receiving end.

3. Cost: Much higher than the same power level DC power supply.

4. Safety: The feedback solutions are easily interfered with, which will delay the OVP, OCP etc. protection strategies.

The 4th issue caused the 1-3nd result for the Rx part and the Tx part have added dc-dc modules, but there was no better solution, so the above series of problems appear by default.

Goals and requirements

Design a wireless charging system that meets the following requirements:

1. Small size, easy to integrate into various products without being obtrusive.

2. Low cost, and it is convenient for widespread promotion.

3. Durable, stable profit from suppliers to customers and not annoying.

4. High conversion efficiency, low temperature, really save electricity.

5. High power, users love that.

6. Safe, the feedback path is really strong.

Achievement

The wireless charging system module released in this article is CDC-A-M100/200-10s, which is a DC-powered lithium battery pack wireless charger:

1. Using CDC-A-T/R-200 chipsets as the core.

2. The size of the transmitter module is 156 x 48 x 25mm (6.14 x 1.89 x 0.98 inches).

3. The size of the receiver module is 156 x 48 x 8mm (6.14 x 1.89 x 0.31 inches).

4. The size of the transmitter circuit board is 54 x 40 x 20mm (2.13 x 1.57 x 0.79 inches).

5. The size of the receiver circuit board is 54 x 40 x 6.4mm (2.13 x 1.57 x 0.25 inches) (the picture is a DEMO board with a thickness of 3mm or 0.12inches).

6. The size of the coil module is 40 x 40 x 5mm (1.57 x 1.57 x 0.20 inches).

7. The default input is DC 42V, and the maximum output is 42V 5A.

8. The whole system power-feedback cycle ≤1ms.

9. The input supports 32V~42V wide voltage.

10. The output is directly connected to the 10S battery pack, and the output supports trickle, constant current, and constant voltage charging modes.

11. Conversion efficiency >92% (input 42V, output 42V 4A) (this efficiency is the system conversion efficiency of the DC power supply to the battery pack).

12. When working for a long time, the maximum temperature rise of the transmitting module is less than 25°C (equipped with a heat dissipation mechanism), and the receiving module does not need a big heat dissipation mechanism.

13. Support FOD detection of φ10mm copper foil paper when is to charge.

14. Provide protection functions such as OVP/OCP/UVP with <1ms response.

15. Support IP65 and long-term vibration conditions, fully complying with the laws and regulations of various countries.

16. In terms of EMS, the distance between two systems is < 20cm (7.87 inches) and they will not interfere with each other.

The DEMO module sample is shown in the figure below:

(The 50 cents CNY is used as a reference for the size of φ8mm 0.08mm copper foil)

This DEMO module is installed on the target e-scooter, and the receiving end is directly connected to the input end of the battery pack. The effect is as follows:

(Note: The rated charging current of this vehicle is 3A.)

Patents

Some invention patents have been applied.

Partners (Example)

PYS High-Tech Co., Ltd. is the EMS partner of JASONSPOWER. It has mature production and manufacturing bases all over the world, so it can support the design and implementation of AC-DC/EMC/ME and other perspectives involved in this field. To provide satisfactory service to global customers.

Invitation

Friends from all over the world are welcome to cooperate with us, give us valuable opinions and suggestions, and join us.

Remark

Hainan Qizhong New Energy Technology Co., Ltd. is a subsidiary of Shenzhen Qitian Taiyi Technology Co., Ltd. And enjoys all the patent rights of Qitian Taiyi. It provides standard architecture and technical specifications for 10~10kW medium power electromagnetic coupling energy transmission systems, as well as the hardware platform and the algorithm support.

JASONSPOWER, located in Taiwan, is a joint venture between Hainan Qizhong New Energy Technology Co., Ltd. and Mr. Jack Chen, who was the business development manager of the Qualcomm wireless charging team. Qizhong New Energy authorizes JASONSPOWER as the only legal partner to target personal wheeled vehicles (non-electric vehicles) globally to provide application services, including chip sales, application solution support, and standard module sales.

Contact method

For business cooperation, please contact Mr. Mason Tsai, Executive Vice President of JASONSPOWER: masontsai@jasonspower.com

Innoscience's Two FCQFN 150V Products Enter the Industrial Application Market

Joey — Sun, 06 Aug 2023 02:00:00 +0000

GaN, known for its high frequency, high efficiency, high power, and high voltage resistance characteristics, is hailed as the promising material of the third-generation semiconductor. Today, with the continuous maturity of GaN technology and the supply chain, the cost is decreasing, leading to the gradual entry of GaN applications in the low-power consumer electronics field, which has become a competitive market.

Also, thanks to its superior features such as high operating frequency, high conversion efficiency, and low on-state resistance, GaN has extensive potential applications in high-power high-frequency fields. Currently, it is expanding towards medium to high-power energy storage, micro inverters, communication base stations, data centers, and other areas.

To promote GaN's application in the high-frequency market, Innoscience has launched two low-voltage GaN products, INN150FQ032A and INN150FQ070A, based on the 150V voltage platform. These platform products meet industrial-grade reliability requirements and are mainly used in solar system optimizers, micro inverters, PD chargers, PSU synchronous rectification, communication power supplies, motor drives, and high-frequency DC-DC converters.

The first product, INN150FQ032A, features a compact FCQFN 4 x 6mm package, low switching losses, and excellent efficiency, and is already in successful mass production. Based on the 150V voltage platform technology, Innoscience has recently introduced the 150V/7mΩ device, INN150FQ070A, with a FCQFN 4 x 6mm pin-to-pin compatible design, which has passed small-scale trial production, allowing customers to choose specifications based on their needs.

Features of INN150FQ032A & INN150FQ070A:

l Industrial-grade application
l Ultra-low gate charge
l Ultra-low on-state resistance
l Compact size, FCQFN 4 x 6mm package

Applications of INN150FQ032A & INN150FQ070A:

l High-frequency DC-DC converters
l Solar power optimizers and micro inverters
l PD chargers and PSU synchronous rectification
l Communication power supplies
l Motor drives

INN150FQ032A and INN150FQ070A continue to inherit many characteristics of InnoGaN, such as low on-state resistance, fast switching speed, and no reverse recovery. These features make them ideal for high-frequency and high-efficiency applications, including solar power optimizers, micro inverters, PD chargers, PSU synchronous rectification, communication power supplies, motor drives, and high-frequency DC-DC converters.

INN150FQ032A PDF

INN150FQ070A PDF

Innoscience's introduction of the two different on-state resistance FCQFN packaged chips in the Innoscience 150V Single GaN series not only provides more reference for customer design but also effectively promotes GaN's application in the industrial field.

Based on the research, development, manufacturing, and iteration of large-scale 8-inch silicon-based GaN technology, Innoscience's product quality and cost advantages have been recognized in the industry. While consumer electronics serve as the first stop for GaN's scaled application, the demand in the industrial sector is gradually rising. Innoscience looks forward to cooperating with partners to promote applications in various fields and build a GaN ecosystem.

GaN Day Is HERE! Check Out the Insights From Industry Experts

Joey — Fri, 04 Aug 2023 10:48:21 +0000

Introduction

As a member of the third-generation semiconductor family, GaN devices have already demonstrated their reliability and longevity in applications such as fast chargers and other low-power products. The usage of third-generation semiconductors in chargers and power banks allows for increased power density, reduced size, and more ports, making it more consumer-friendly. For high-power applications, such as portable power stations, the use of GaN devices significantly reduces switch losses, enhances conversion efficiency, and lowers heat dissipations and overall costs.

Fans who regularly follow ChargerLAB's teardown articles and videos are aware that GaN has already made its mark in high-power scenarios. However, what most people may not know is that there exists a special day dedicated to Gallium Nitride that we have been leading—GaN Day. In this article, we will delve into its origins and relay the perspectives of various industry experts on the future prospects of the third-generation semiconductor industry, discussing the industry's present and future together.

Origin of GaN Day

GaN is a compound material composed of nitrogen and gallium. Nitrogen ranks 7th in the periodic table of elements, and gallium ranks 31st. Hence, July 31st was named GaN Day and has gained widespread recognition within the industry. Since ChargerLAB, in collaboration with multiple third-generation semiconductor companies, first proposed GaN Day as a commemorative event in 2020, it has gained significant recognition up to the present time.

Each year, around GaN Day, the third-generation semiconductor industry holds relevant events to celebrate the innovative applications of new GaN technology in various fields. This year is no exception, as we continue the tradition.

Insights from Industry Experts

Innoscience

CEO Jay Son

GaN has become a highly acclaimed material in the realm of third-generation semiconductors. In 2020, it witnessed a groundbreaking application in the fast-charging sector of smartphones, marking a significant milestone for the GaN industry. In 2022, the demand for GaN expanded beyond the vast consumer electronics market. Spurred by new technologies such as AI, communications, autonomous driving, and energy storage, GaN is gaining more and more interest in applications like data centers, automotive electronics, and green energy. The first half of 2023 witnessed an exciting series of events in the GaN industry, such as exciting news of new product launches, industry mergers and acquisitions and a substantial surge in product shipments. It creates a promising future for GaN.

As a leader in the GaN industry, Innoscience has surpassed 270 million units in shipments, and our sales revenue in the first half of 2023 increased by 500% compared to the same period last year. What's more, our product applications have expanded beyond consumer electronics, extending into domains like data centers, automotive electronics, green energy and energy storage. Innoscience stands out among other GaN companies with the cutting-edge 8-inch silicon-based GaN research and manufacturing platform, boasting a comprehensive lineup of high, medium, and low-voltage GaN products. Currently, we can produce 15,000 wafers per month, which gives us a distinct advantage in large-scale manufacturing. Thanks to our integration of design, research and development, production, and sales, we can swiftly adapt and iterate our products to propel terminal applications forward. As the GaN market continues to surge, we would like to collaborate with both upstream and downstream enterprises, leading the way towards a standardized GaN industry chain and expediting the development of the industry ecosystem.

Power Integrations

Doug Bailey - VP Marketing

Power Integrations is finding is that for compact power supplies with a higher spec, GaN is the lowest cost approach. This is because GaN efficiency reduces or eliminates heat sinks and allows the designer to use a simple flyback, which eliminates the extra switches necessary for complex topologies such as LLC or asymmetric half bridge (AHB).

But optimizing the potential of GaN requires new system-level thinking. The old topologies that were invented to compensate for the challenges of using silicon are not required, because GaN is much closer to being an ideal switch. By that I mean that GaN devices switch very, very fast, they have a very low gate capacitance, and very low output capacitance COSS. But that brings with it a different set of design challenges. Power Integrations has found that the best way to work with GaN is to integrate it into a single package with the controller ICs. We have created sub-systems in GaN, such as our InnoSwitch flyback power supply ICs, our power factor correction HiperPFS-5 parts and our LytSwitch-6 LED drivers. The products that we've built do a beautiful job of addressing notebook adapters, cell phone adapters, small power supplies, LED lighting etc, but there are many applications that we still have to address, so our biggest challenge is completing these system level designs and bringing them to market.

Because GaN approaches the idea switch, my view is that when “GaN can, GaN should”. I see GaN basically taking over at the lower voltages - mains through to 1200 volts; essentially GaN will subsume the entirety of that market up to a certain power level, especially for variable power applications. It's about the technical development of GaN: as the voltage of GaN increases it will replace silicon carbide, and as its current carrying capacity increases, GaN will replace IGBTs.

CorEnergy

Gavin - Founder and General Manager

While another GaN Day is coming, as a veteran in the GaN industry, I am very happy to see that GaN devices and their application solutions are recognized and used by more and more customers. The charging expo held in Shenzhen in the first half of this year, the huge number of participating manufacturers and visiting customers shows how hot the GaN industry is at this moment. In the context of "dual carbon," almost all industries are facing profound challenges of low-carbon transformation, and new semiconductor material technologies will lead the transformation of the energy industry and realize innovation-driven development. GaN devices can bring advantages in performance, size and weight to power modules, making a significant contribution to the sustainable reduction of carbon emissions.

The vision of Corenergy is to shape a greener world with GaN. In the application fields, GaN still has a large growth space in the consumer electronic segment, because more and more consumers are keen to use fast chargers with smaller size, lighter weight and faster speed. This provides a good market opportunity for GaN fast chargers. At the same time, the release of the PD 3.1 fast charging standard is a milestone upgrade for the charger industry. It has broken through the long-standing 100W limit and achieved a double increase to 240W. At the same time, the output voltage has also achieved the maximum coverage of 48V, which can meet the application of consumer, industrial and other multi-field products to further expand the applicable market of GaN fast chargers.

Further, the unification and upgrading of PD standards will help consumers choose chargers that can meet their needs from more product brands and types, and promote further growth in demand. In addition, GaN will experience explosive growth in the segments of energy storage, data centers and new energy in the next 2-3 years. For example, GaN devices can help the development of new electric vehicle charging piles to achieve the goal of a few minutes of charging for a few hundred kilometers of driving, eliminating the mileage anxiety of electric vehicle drivers and boosting the market of electric vehicles.

I believe that in the next few years, GaN will be hotter than the current SiC market. Therefore, Corenergy's R&D, products and applications are also moving from consumer electronics to industrial-grade applications. In terms of competition in the GaN industry, European and American companies still have relatively large advantages in basic technology, innovation, and patent accumulation, while domestic companies have advantages in applications, markets, and manufacturing, and are catching up in technological innovation. In the context of domestic substitution and with the trend of re-globalization, Chinese companies, including Corenergy, have made and will continue to make great progress, making their contribution to a lower-carbon and greener world.

DGCX CAP

Liu Yuanxin - CEO

Gallium Nitride (GaN) technology is the future of charging advancements, spanning mobile phone, laptop chargers, outdoor power banks, smart lighting, and vehicle charging/electricity conversion devices. With its immense market potential and technological growth, GaN technology will prioritize low loss, high stability, and high power density in the charging sector. As GaN technology continues to evolve, it will revolutionize various emerging fields like power transmission, medical equipment, photovoltaic energy storage, electric vehicles, and aviation power, marking a new "energy conversion revolution."

With over 20 years of expertise in ultra-miniature capacitor technology, Chengxi People focuses on capacitor research, production, sales, and service. We strive to provide the world with safe, reliable, energy-efficient, and environmentally friendly capacitor components, aiming to become a leading capacitor brand globally.

GaN Systems

Andy Chuang - VP of Business Development

The development of third-generation semiconductors, led by gallium nitride (GaN) and silicon carbide (SiC), plays a pivotal role in supporting China’s wide-ranging targets for climate mitigation, the so-called “dual carbon” goals and fostering a highly digitalized and electrified society. GaN power semiconductors, in particular, are currently experiencing a tipping point of explosive adoption, expanding their use from fast chargers of consumer devices to data centers, renewable energy systems, industrial motor systems, and electric vehicles, thereby contributing to the optimization of power system efficiency in these application areas.

As a killer application for GaN power semiconductors, the electric vehicle sector has witnessed rapid growth in recent years, achieving record-breaking sales. China has taken a leading position in the development of electric vehicles. Not only have the unit sales surpassed other countries, consumers shifting attitudes toward electric vehicle purchases occurred earlier. The main determinant of electric vehicle purchases is transitioning from subsidies to considerations based on functionality and price. In response to this trend, GaN power semiconductors have become another focal point, after silicon carbide, for research and development in electric vehicle manufacturing. The goal is to leverage the exceptional characteristics of GaN power devices to achieve breakthroughs in efficiency, driving range, and even total bill-of-material costs, with GaN already showing accelerated applications in On-Board Chargers and DC-DC converters.

The widening adoption of GaN across multiple applications for enhanced efficiency, power density, and cost-effectiveness has sustained strong momentum in the power semiconductors sector, even amid economic headwinds. We believe that cross-industry collaborations and talent investments are essential to shorten the learning curve for GaN power semiconductor technology and unlock more application possibilities.

Vergiga

Chairman - Leo.Lee

In recent years, with the joint efforts of the whole industry chain, GaN power devices have rapidly occupied the fast-charge consumer market, basically realizing the market replacement of Si-based devices. From the initial 65W development to today's 18W-300W PD fast charger, GaN power devices have proved to the market its superior performance and brought power density and cost advantages, and its reliability has gradually been recognized by the market.

Driven by the market and the efforts of the industry, the cost of GaN power devices has been gradually reduced to close to that of silicon-based devices, and it is expected to replace silicon-based devices in other consumer markets such as home appliances and adapters. At the same time, based on the gradual improvement in the performance and reliability of GaN power devices and the improvement of market recognition, major manufacturers are actively deploying and promoting the application of GaN devices in the industrial end, such as micro-inverters, data centers, and energy storage and so on. In terms of localization, GaN power devices already have a domestic industry chain from substrate and epitaxy to finished products, and it is expected to achieve corner overtaking in the third generation of semiconductor devices.

Vergiga Semiconductor has always focused on the research and development of power devices and their application technology. With ten years of research, Vergiga Semiconductor has become one of the few advanced semiconductor design companies with a full range of silicon-based low-voltage, medium-voltage and high-voltage full-range power MOSFET / IGBT devices and modules, as well as special semiconductor process design capabilities. semiconductor design company. At the same time, in order to accelerate the process of domestic self-reliance of power devices, Vergiga Semiconductor actively deploys the third-generation semiconductors, and develops a number of SiC MOSFET and GaN HEMT series products.

TI

Product Line Manager for GaN - Abhi Muppiri

The number of companies replacing silicon with GaN is growing rapidly as GaN becomes a key technology to improve power density and increase efficiency in power systems across multiple applications including data centers, telecom power supplies, solar inverters and power delivery applications. From TI’s perspective, the below 3 reasons explain how GaN is changing power management:

While GaN may be perceived as a challenging technology to design with, our company simplifies GaN designs by integrating a gate driver, as well as several protection features, in the chip, enabling designers to get the maximum benefit from the technology by delivering a huge performance benefit and making designing with GaN a lot easier.

GaN has been in development for a number of years and its reliability is established. Our company’s GaN chips have achieved more than 40 million hours of reliability testing, passed automotive qualifications, and has already been adopted in demanding industrial sectors for over 5 years.

Today, GaN is more expensive than silicon in chip-to-chip comparisons, however, its benefits to the overall system cost, improvements in efficiency and power density outweigh the initial investment. For example, an efficiency gain of as little as 0.8%in a 100-megawatt data center using a GaN-based power management system can save $7 million in energy costs over 10 years.

LIHOMICRO

CEO - Sam Chung

With the rapid development of semiconductor devices, The third generation semiconductors have entered the fields of new energy vehicles, photovoltaic inverters, 5G base stations, PD fast charging and so on. SIC devices are mainly used in new energy vehicles and industrial control fields, and Gan devices are mainly used in 5G base stations and power supplies. Compared with the silicon devices, SIC MOS has lower on resistance and fast switching speed at high voltage and high cutrent, which is especially suitable for inverter applications of new energy vehicles. The new round of industrial development brings a huge market prospect for the third generation semiconductor devices.LIHOMICRO SIC devices will improve the technology upgrade and product iteration according to the different needs of customer groups and the use of more and more customers, which is expected to promote the industry development.

TAGOR

VP of Market Development - Tino Pan

When discussing the characteristics of gallium nitride (GaN) materials, we should not limit its applications solely to power products. GaN has numerous outstanding properties, particularly in the wireless communication market where it is highly suitable. Shenzhen Tagoretech Co., Ltd( The following will be referred to as "Taigao").is a semiconductor company specializing in GaN RF front-end chips. With its invention patents in the field of GaN RF, the company has successfully developed a series of high-power GaN RF front-end chips. These innovative chips significantly enhance wireless communication distance and improve image transmission quality. With Taigao GaN design, these chips have higher power density and lower energy consumption. This innovative technology not only improves the overall performance of products but also brings revolutionary breakthroughs to the field of wireless communication. The key technology of Taigao GaN RF devices increases the coverage range in densely populated areas by 4.5 times. Additionally, in line-of-sight limited environments, the transmission distance is doubled, and the transmission rate is increased by 2-4 times. At the same time, power loss is reduced by more than 10 times while maintaining the same communication range and throughput.

Summary of ChargerLAB

The widespread application of third-generation semiconductors has revolutionized the traditional power conversion methods. By reducing switching losses and increasing the switching frequency of power supplies, it achieves two significant benefits. On one hand, it reduces the size of power supplies, and on the other hand, it enhances conversion efficiency, bringing noticeable technological advancements to consumers. Looking ahead, Gallium Nitride (GaN) devices will play a pivotal role in higher-power applications, improving the efficiency of power systems, reducing energy wastage, and promoting the implementation of green and low-carbon principles.

Driving the Ubiquity of Qi2 Standard | Injoinic Unveils Wireless Charging SOC IP6802

Joey — Wed, 19 Jul 2023 10:30:27 +0000

Introduction

The Qi2 wireless charging standard, developed by the Wireless Power Consortium (WPC), is a new and enhanced standard based on Apple's pioneering magnetic power profile. It provides a better wireless charging experience and paves the way for future feature development and enhanced functionalities. Additionally, the use of this technology ensures optimal compatibility between devices and wireless chargers, leading to improved efficiency and charging speed.

ChargerLAB has learned that Injoinic has recently launched the IP6802, a new wireless charging controller chip. This chip serves as a wireless charging transmitter control System-on-Chip (SOC), supporting PD fast charging, input voltage ranging from 4V to 20V, and 30W wireless charging applications. It is also backward compatible with power applications ranging from 5W to 15W. The chip is also equipped with a built-in H-bridge driver, which, when paired with external MOSFETs, enables a single-chip wireless charging solution.

Injoinic IP6802 Wireless Charging Chip

The IP6802 is a complete single-chip wireless charging SOC. It incorporates the PD 3.0 protocol, supporting both PD fast charging and DP&DM fast charging. It automatically requests fast charging voltage and supports input voltages from 4V to 20V. The chip includes full-bridge drivers and digital demodulation, eliminating the need for external drivers and operational amplifiers. With the integration of four MOSFETs and a few peripheral components, a complete Qi2 wireless charging product can be achieved.

It also integrates a 32-bit MCU, ADC, timers, H-bridge driver, I2C communication, demodulation and decoding circuits, and ample IO resources. It supports customization and certification testing. The chip also features a built-in 32KB MTP memory, enabling firmware upgrades, customizable LED indicator effects, and user-defined customization through PC-based software.

Additionally, the IP6802 incorporates dynamic power regulation, ensuring uninterrupted wireless charging even when powered by insufficient USB power adapters. The chip supports both static and dynamic FOD foreign object detection, external NTC thermistor for overheat protection, and safeguards against input overvoltage, overcurrent, and undervoltage conditions.

Furthermore, it supports external passive crystal oscillators and can be used with low-cost CBB or NPO capacitors to meet different cost and aesthetic requirements for wireless chargers. Packaged in a compact QFN5 x 5-32 package, it allows for personalized designs.

The circuit diagram above demonstrates the practical application of the chip, which requires only resistors, capacitors, and corresponding MOSFETs to realize a complete wireless charger design. This simplifies the design process, reduces material and production costs through high integration.

Summary of ChargerLAB

The introduction of the Injoinic IP6802 wireless charging controller chip brings a highly integrated and user-friendly solution to the Qi2 wireless charging standard. With built-in drivers and voltage-current demodulation, there is no need for external drivers and operational amplifiers. It also supports PD fast charging, eliminating the need for an external power chip. A complete Qi2 fast charging wireless charger design can be achieved with a single chip, offering a streamlined design to accelerate mass production and promote widespread adoption of wireless fast charging products.

In case you don't know, Injoinic is a company that specializes in the development and production of integrated circuits (ICs) and semiconductor solutions. They offer a range of products, including power management ICs, wireless charging ICs, LED driver ICs, and other semiconductor devices. Injoinic focuses on providing innovative and reliable solutions for various industries, including consumer electronics, automotive, and industrial applications.

NFC Forum Unveils Exciting Upgrades: Extended Transaction Range and Innovative Features

Joey — Sun, 16 Jul 2023 01:08:00 +0000

NFC technology has been continuously evolving, providing significant convenience for wireless connections and data transmission. Its most widespread applications are undoubtedly seen in daily life, such as transportation cards and access cards. Recently, Mike McCamon, the Executive Director of the NFC Forum, revealed major news regarding the new version of NFC. According to him, the new version of NFC plans to expand the transaction range by six times, reaching a maximum of 30mm. This news has garnered significant attention within the industry.

McCamon stated that the expanded transaction range is an essential component of the NFC Forum's new three to five-year technology roadmap.

Currently, the minimum transaction range of NFC technology is 5mm, while the maximum transaction range is 2cm. The latest information on the NFC Forum's official website indicates that their future blueprint will raise the transaction range to 3-4cm, which means the minimum usage range of NFC will expand from 5mm to 3cm, a six-fold increase.

In addition to the expanded transaction range, the new technology roadmap includes a series of innovative measures aimed at enhancing the practicality and user-friendliness of NFC technology. This includes allowing new data formats to be directly stored on NFC tags, introducing device-to-device connectivity, and providing users with more convenient and faster interaction experiences.

“The idea is that, as your phone comes in transaction or close proximity of the payment terminal, the connection could start and then also complete the transaction much quicker. And also you won’t have to be as precise. All of us have had this experience of taking our phone and kind of moving it around trying to find the right sweet spot on the terminal,” McCamon says. “The idea is with your increased range, you’d be able to not have to do that.”

About the NFC Forum

The NFC Forum is a global standards and advocacy association for Near Field Communication (NFC) technology. They have been dedicated to transactionless technology and solutions across various industries. As a member-led organization, the forum's mission is to promote the use of NFC technology by developing specifications, ensuring interoperability between devices and services, and raising awareness in the market.

The NFC Forum aims to bring the convenience of near field technology into everyday life, enabling organizations to provide secure, touch-based interactions, and intuitive, reliable experiences for users worldwide. Member-driven activities of the forum include specification and test case development, certification programs, and special interest groups to identify and promote transactionless technology in an increasing number of industries.

Summary of ChargerLAB

In conclusion, the latest developments in NFC technology, as shared by Mike McCamon, Executive Director of the NFC Forum, indicate a significant advancement in transaction range and additional innovative features. The plan to expand the transaction range by six times, up to 30mm, showcases the forum's commitment to enhancing the capabilities of NFC technology. This expansion not only enables easier and faster transactions but also eliminates the need for precise alignment between devices. The NFC Forum's vision encompasses not only increased transaction range but also the incorporation of new data storage capabilities on NFC tags and the introduction of device-to-device connectivity for seamless and efficient user interactions.

As an influential organization, the NFC Forum continues to shape the standards and promote the adoption of NFC technology worldwide. Their efforts aim to bring the convenience and security of near field communication into various aspects of our lives, providing users with intuitive and reliable experiences. By facilitating interoperability and driving advancements in the field, the NFC Forum ensures that NFC technology remains at the forefront of wireless connectivity and data transmission solutions.

Injoinic Unveils Flagship E-Marker Chip IP2133H

Joey — Sun, 11 Jun 2023 01:58:59 +0000

Introduction

The E-Marker chip is utilized to indicate the power transmission capability and data transfer speed of USB-C cables. When the cable exceeds a transmission current of 3A and supports USB3.0 data transfer, it requires the use of an E-Marker chip for cable identification. In the realm of current fast charging for smartphones, both high-power and high-current fast charging necessitate the application of an E-Marker chip to identify the cable's power transmission capability. This enables fast charging, allowing mobile phones to quickly reach full battery capacity within a remarkably short time.

Injoinic Technology has introduced the industry's first E-Marker chip, the IP2133H, which supports a withstand voltage of 55V for the CC and VCONN pins. This remarkable chip is not only the first in the industry to attain PD3.1 V1.7 standard certification (TID: 9513), but it is also the pioneering E-Marker chip capable of internal temperature data retrieval. With this cutting-edge feature, users can precisely monitor cable temperature.

Injoinic Introduces the IP2133H E-Marker Chip

The Injoinic IP2133H is an electronic marker chip designed for USB Type-C cables, adhering to the USB Type-C 2.2 standard and PD3.1 specifications. The chip integrates the hardware biphase mark code (BMC) protocol, as well as a physical layer (PHY) protocol . It supports commands for retrieving manufacturer information and reading status, while its built-in temperature sensor enables cable temperature monitoring.

It can support EPR (Extended Power Range) 240W power transmission and offers support for SOP' and SOP'' instructions. It also caters to USB4 80G, Thunderbolt 4, and Thunderbolt 3 cable applications. The chip integrates VCONN diodes and Ra resistors, resulting in a simplified peripheral component layout. Additionally, it supports up to four programming cycles and incorporates personalized programming protection to offer a comprehensive solution for USB-C cables.

It is available in DFN2 x 2-6/8L and WLCSP-6B packages, catering to diverse requirements of data cable applications. It provides support for both passive and active USB-C cables, including EPR 240W cables, as well as Thunderbolt 3 and Thunderbolt 4 cable applications.

According to PD3.1 EPR V1.8 specifications, once a cable declares support for EPR applications, it needs to support 48V/5A. Due to the physical structure of the CC pin and VBUS pin being adjacent in the USB-C connector, there is a possibility of CC, VCONN pins coming into contact with the VBUS pin. Therefore, in EPR cables, the withstand voltage of the E-Marker chip's CC and VCONN pins becomes particularly important.

Injoinic IP2133H addresses the high withstand voltage requirements of E-Marker chips in USB PD3.1 applications by enhancing the withstand voltage capability of CC and VCONN pins to 55V. Even if there is contact between the pins and VBUS, the chip will not be damaged, thereby improving the reliability of the cable.

This is how the IP2133H looks like.

And it adopts DFN2 x 2-6L package.

This is how the IP2133TH looks like.

It adopts DFN2 x 2-8L package, with the addition of SCL and SDA pins.

Summary of ChargerLAB

With the increasing power transmission of USB-C ports, USB-C cables that support EPR will use E-Marker chips for cable identification. The Injoinic IP2133H supports USB Type-C 2.2 standard and PD3.1 specifications. The chip integrates an temperature sensor, allowing the retrieval of cable temperature for overheating protection. Additionally, the IP2133H supports active cable applications and provides a withstand voltage of 55V for CC and Vconn, significantly enhancing cable reliability.

Simulation Model of Industry's First 1200V GaN-on-Sapphire Device Released by Transphorm

Joey — Mon, 05 Jun 2023 01:19:01 +0000

Transphorm, global leader in fundamentally superior, quantitatively outperforming GaN power semiconductors—announced availability of its 1200V FET simulation model and preliminary datasheet. The TP120H070WS FET is the only 1200V GaN-on-Sapphire power semiconductor introduced to date, making its model the first of its kind. Its release indicates Transphorm's ability to support future automotive power systems as well as three-phase power systems typically used in the broad industrial, datacom, and renewables markets. These applications will benefit from the 1200V GaN device's higher power density and reliability along with equal or better performance at more reasonable cost points versus alternative technologies. Transphorm recently validated the GaN device's higher performance ability in a 5 kW 900 V buck converter switching at 100 kHz. The 1200V GaN device achieved 98.7% efficiency, exceeding that of a similarly rated production SiC MOSFET.

The innovative 1200V technology also underscores Transphorm's leadership in GaN power conversion. Vertical integration, epitaxy ownership, and patented process paired with decades of engineering expertise enable the company to bring to market the highest performing GaN device portfolio with four additional major differentiators: Manufacturability, Drivability, Designability, and Reliability.

PCIM 2023 attendees can learn more about the 1200V device from Transphorm representatives at Hall 7, Booth 108 during May 9 – 11.

Preliminary Device Model Specifications and Access

Transphorm's 1200V technology is anchored in proven process and mature technology, satisfying customer confidence requirements. The GaN-on-Sapphire process is in volume production today in the LED market. Additionally, the 1200V technology leverages the fundamentally superior, normally-off GaN platform used in Transphorm's current device portfolio.

Key TP120H070WS device specifications include:

•70 mΩ RDS(on)

•Normally off

•Efficient bidirectional current flow

•± 20 Vmax gate robustness

•Low 4Vth gate drive noise immunity

•Zero QRR

•3-lead TO-247 package

The Verilog-A device model is recommended for use with the SIMetrix Pro v8.5 Circuit Simulator. A LTSpice model is in development and will be released in Q4 2023. Simulation modeling allows for fast and efficient power system design validation while reducing design iterations, development time, and hardware investments.

1200V FET samples are expected to be available by Q1 2024.

Transphorm GaN in Automotive Power Systems and Charging Ecosystem

While the 1200V GaN device is an optimal solution for various market applications, it offers a unique advantage to automotive systems.

The electric vehicle industry, especially at the higher kilowatt nodes for larger vehicles, is moving toward 800 V batteries in the latter half of this decade. As such, 1200V power conversion switches will be used to deliver the required performance level. Transphorm's 1200V platform is therefore well positioned for success in next generation onboard charger, DC-to-DC converters, drive inverters, and pole charging systems.

For current model EVs using 400 V batteries, Transphorm offers 650 V normally-off SuperGaN FETs that are AEC-Q101 qualified to 175°C and in volume production.

"We are the leading power semiconductor company demonstrating and delivering on the promise of GaN," said Umesh Mishra, CTO and Co-founder, Transphorm. "Our expertise brings to market unmatched GaN devices that set new standards every day for power density, performance, and system cost. Our 1200V technology is a testament to our engineering team's innovative vision and determination. We're proving that GaN can very easily play in application markets previously slated for silicon carbide, which opens a wide range of market adoption potential for our business and GaN in general."

About Transphorm

Transphorm, a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry's first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company's vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm's innovations move power electronics beyond the limitations of silicon to achieve over 99% efficiency, 50% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan.

Apple iPhone 15 Support 15W Wireless Charging Without MagSafe

Joey — Thu, 25 May 2023 10:46:50 +0000

ChargerLAB recently got a message from the industry that Apple iPhone 15 continues to support 15W wireless fast charging. But this time, the iPhone 15W wireless charging can be compatible with the Qi2 standard.

As we all know, the wireless charging power of the iPhone is divided into 7.5W and 15W, only products that integrate Apple official MagSafe module can provide 15W wireless charging. In this way, after MFi, Apple gradually promoted the new accessory certification system, MFM. However, the iPhone 15 is likely to support two wireless charging protocols, namely the original MagSafe and the third-party Qi2 standard, and Qi2 will be recommended as compatible wireless charging technology by Apple for iPhones.

ChargerLAB confirmed from the supply chain that the wholesale price of Apple's MagSafe module is about $16, it takes up the largest part of the cost, resulting in higher retail prices. The quotation of the new Qi2 wireless charging module is less than one-third of Apple's MagSafe module, and the manufacturer does not need to be a member of MFi. In this way, there will definitely be cheaper and faster wireless charging accessories on the market.

Not only that, Qi2 is compatible with all iPhones that support wireless charging, but Apple has yet to officially confirm how fast it can be. What we can confirm is that the wireless charging speed can be faster in the future. Not only Apple devices, but Android phones can also use this technology to make wireless charging more popular and universal.

To reach this, many highlights of the Qi2 standard have been introduced.

For example:

1. It added on-chip authentication. In addition to the master controller, the transmitter (TX) also needs to be equipped with a dedicated authentication chip.

2. Qi2 MPP test is required to achieve 15W wireless fast charging.

3. Qi2 compliance test requires new test equipment to be purchased.

At the same time, ChargerLAB found that Apple is listed in the newly announced Board of Directions of WPC, which shows its importance in promoting the Qi2 standard.

It also marks that Apple's accessory ecosystem may be more open in the future, why would we say that? Cause unlike the Apple MFi standard, the Qi2 and PD are both initiated by the industry alliance led by Apple, widely used by Apple, and gradually become the industry standard. The wireless charging industry will also benefit from this, including master control chips, MOSFETs, MLCCs, charging coils, magnets, ferrite sheets, laboratories, factories, brand owners, and dealers.

Summary of ChargerLAB

Well, the new Qi2 standard of iPhone 15 may bring practitioners in the wireless charging industry in a new direction, and more wireless charging applications using this standard will bring consumers a better user experience, the future is still wireless.

Compatible With Qi2 | Apple iPhone 15 Support 15W Wireless Charging Without MagSafe

Yi — Thu, 25 May 2023 01:13:21 +0000

If you wanna buy the tester of POWER-Z, you can visit our Amazon store: Click here.

Introduction
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ChargerLAB recently got a message from the industry that Apple iPhone 15 continues to support 15W wireless fast charging. But this time, the iPhone 15W wireless charging can be compatible with the Qi2 standard.

Navitas New 650V MPS SiC Diodes Deliver Highest Efficiency and Superior Robustness

Joey — Sun, 21 May 2023 01:36:33 +0000

5th-gen GeneSiC silicon carbide (SiC) diodes deliver high-speed, high-efficiency performance with proprietary ’low-knee’ technology for cool operation

Torrance, CA., USA, May 8th, 2023— Navitas Semiconductor, the only pure-play, next-generation power semiconductor company, announces the fifth generation of high-speed GeneSiC silicon carbide (SiC) power diodes for demanding data center, industrial motor-drive, solar and consumer applications.

The 650 V-rated Merged-PiN Schottky (MPS) diodes integrate a unique PiN-Schottky structure, delivering ‘low-built-in voltage-biasing’ (‘low knee’) for the highest efficiency across all load conditions with superior robustness. Applications include PFC in server/telecom power supplies, industrial motor drives, solar inverters, LCD/LED TVs, and lighting.

“We’re delivering reliable, lead-edge performance for in-demand applications like AI and ChatGPT data center power,” noted Dr. Ranbir Singh, Navitas EVP for SiC. “Efficient, cool, dependable operation ensures long lifetimes and brings peace-of-mind to power designers and optimizes their time-to-prototype and time-to-market.”

The novel GeneSiC MPS design combines the best features of both PiN and Schottky diode structures, producing the lowest forward-voltage (VF) drop of only 1.3 V, high surge-current capability (IFSM), and minimized temperature-independent switching losses. Proprietary thin-chip technology further reduces VF and improves thermal dissipation for cooler operation. These GeneSiC diodes are being offered in a low-profile surface mount QFN package for the first time.

To ensure reliable operation in critical applications, the gen-5, 650 V MPS diodes offer best-in-class robustness and ruggedness, with high surge-current and avalanche capability, with 100% avalanche (UIL) production testing.

Ranging from 4 to 24 A capability, in an array of surface-mount (QFN, D2-PAK) and through-hole (TO-220, TO-247) packaging, the GExxMPS06x-series MPS diodes cover applications ranging from 300 to 3,000 W and diverse circuits such as solar panel boost converters, and continuous-current mode power factor correction (PFC) in gaming consoles. With a ‘common-cathode’ configuration, the TO-247-3 package offers great flexibility for high power-density and bill-of-material reduction in interleaved PFC topologies.

About Navitas

Navitas Semiconductor is the only pure-play, next-generation power-semiconductor company, founded in 2014. GaNFast power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include mobile, consumer, data center, EV, solar, wind, smart grid, and industrial. Over 185 Navitas patents are issued or pending. Over 75 million GaN units have been shipped, and Navitas introduced the industry’s first and only 20-year warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.

Navitas Launches into High-Power Markets with GeneSiC SiCPAK Modules

Joey — Tue, 16 May 2023 01:33:21 +0000

Pioneers of SiC technology “Electrify Our World” and enable expanded applications ranging from 10s kW to MW in rail, EV, industry, solar, wind and energy storage

Torrance, CA., USA, May 8th, 2023— Navitas Semiconductor, the only pure-play, next-generation power semiconductor company, announces their expanded portfolio into higher power markets with their leading-edge silicon carbide (SiC) power products in SiCPAK modules and bare die.

Target applications cover centralized and string solar inverters, energy storage systems (ESS), industrial motion, electric vehicle (EV) on-board chargers, EV roadside fast chargers, wind energy, UPS, bi-directional microgrids, DC-DC converters, and solid-state circuit breakers.

Ranging from 650 V to 6,500 V, Navitas has the widest range of SiC technology. From an original line-up of discrete packages – from 8×8 mm surface-mount QFNs to through-hole TO-247s – the GeneSiC SiCPAK is an initial, direct entry point into higher-power applications. A comprehensive power-module roadmap, with high-voltage SiC MOSFETs and MPS diodes, GaN power ICs, high-speed digital isolators and low-voltage silicon control ICs is being mapped out.

Dr. Ranbir Singh, Navitas EVP for SiC noted, “With a complete portfolio of leading-edge power, control and isolation technology, Navitas will enable customers to accelerate the transition from fossil fuels, and legacy silicon power products to new, renewable energy sources and next-generation semiconductors, with more powerful, more efficient, faster-charging systems.”

SiCPAK modules employ ‘press-fit’ technology to offer compact form factors for power circuits and deliver cost-effective, power-dense solutions to end users. The modules are built upon GeneSiC die that have already made a mark in terms of superior performance, reliability, and ruggedness. Examples include a SiCPAK half-bridge module, rated at 6 mOhm, 1,200 V with industry-leading trench-assisted planar-gate SiC MOSFET technology. Multiple configurations of SiC MOSFETs and MPS diodes will be available to create application-specific modules for superior system performance. The initial release will include 1,200 V-rated half-bridge modules in 6, 12, 20, and 30mOhm ratings.

Within the lead-free SiCPAK, each SiC chip is silver (Ag) sintered to the module’s substrate for superior cooling and reliability. The substrate itself is ‘direct-bonded copper’ (DBC) and manufactured using an active-metal brazing (AMB) technique on silicon-nitride (Si3N4) ceramics, ideal for power-cycling applications. This construction delivers excellent strength and flexibility, fracture resistance, and good thermal conductivity for cool, reliable, long-life operation.

For customers who prefer to make their own high-power modules, all GeneSiC MOSFET and MPS diodes are available in bare die format, with gold (Au) and aluminum (Al) top-side metalizations.

About Navitas

Navitas Semiconductor is the only pure-play, next-generation power-semiconductor company, founded in 2014. GaNFast power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include mobile, consumer, data center, EV, solar, wind, smart grid, and industrial. Over 185 Navitas patents are issued or pending. Over 75 million GaN and 10 million SiC units have been shipped, and Navitas introduced the industry’s first and only 20-year GaN warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.

Infineon Launched a High-Voltage MCU With USB-C PD and Buck-Boost Charging Controller

Joey — Wed, 10 May 2023 01:40:10 +0000

USB-C has been widely adopted as the connector of choice in the consumer electronics industry and is expected to replace the majority of conventional power adapters up to 240W. As the world transitions to USB-C-based DC power sources, fast-charging protocols are becoming ubiquitous, enabling greater functionality and improved user experience. To meet the demands of this trend, Infineon Technologies AG has released the EZ-PD PMG1-B1 complementing the EZ-PD PMG1 family of high-voltage microcontrollers (MCU) with USB-C power delivery (PD).

The PMG1-B1 PD MCU is a single-chip solution that integrates a USB-C PD controller, a buck-boost battery charge controller, high voltage protection circuitry, and a microcontroller. It targets battery-powered applications, including power tools, personal care products, smart home appliances, and other portable devices.

“As a market leader in USB-C PD microcontrollers, we are excited to introduce the new PMG1-B1 PD MCU, which simplifies USB-C PD integration in battery-powered systems for OEMs,” said Ganesh Subramaniam, Senior Vice President and General Manager of Wired Connectivity Solutions at Infineon. “The MCU offers an unprecedented level of integration, enabling USB-C PD connectivity, battery charging, high voltage protection, and MCU functions in a single chip.”

The device is USB PD 3.1 certified and based on Infineon’s market-proven EZ-PD stack, ensuring compliance and interoperability with the latest USB-C and PD specifications. It combines a USB-C PD controller, a buck-boost battery charge controller, a 32-bit Arm® Cortex®-M0 processor with a 128KB flash memory MCU, and a range of analog and digital peripherals, such as timers, UART, SPI, I²C interfaces, and PWMs. In addition, the PMG1-B1 integrates other high-voltage circuitry, such as V BUS-powered regulators, FET gate drivers, and advanced fault protection circuitry, including over-voltage, over-current protection, and VBUS to CC short-circuit protection, to ensure robust and reliable operation.

The PMG1-B1 PD MCU supports a wide input voltage range of 4V to 24V with 40V tolerance and programmable switching frequency (150 to 600 kHz) to deliver up to 100W (20V, 5A) power to the USB-C port. This enables the charging of 2- to 5-cell batteries in an integrated USB-C PD MCU solution. With its high level of integration, the MCU provides a footprint-optimized single-chip solution and a reduced bill-of-material (BOM) for customers.

To support the development of applications implementing the MCU, Infineon provides developers with the ModusToolbox firmware development environment. Together with the appropriate board support package (BSP) and the EZ-PD PMG1 software development kit (SDK), it eliminates the need for an expert-level understanding of the intricacies of the device resources.

Navitas Power Forward with Next-Gen GaN and SiC Power Semiconductors at PCIM 2023

Joey — Sat, 06 May 2023 01:48:39 +0000

EV, solar, home appliance and industrial solutions launched and highlighted at Europe’s most prestigious power electronics conference and exhibition

Torrance, CA – April 12th, 2023—Navitas Semiconductor, the only pure-play, next-generation power semiconductor company, will introduce and display an expanded portfolio of leading-edge gallium nitride (GaN) and silicon carbide (SiC) power products at Europe’s prestigious PCIM 2023 conference.

Featuring over 400 international technical papers, with a comprehensive technology and application-focused conference program, PCIM – which takes place in Nuremberg, Germany, from 9th to 11th May – is Europe’s leading event for professionals involved in the fields of “power conversion and intelligent motion”.

Visitors to the Navitas exhibition booth (Hall 9, #525) will discover how GaN and SiC deliver the advanced performance, functionality, reliability and ease-of-use demanded by next-generation EV, solar, energy storage, home appliance and industrial drives. Highlights include GaNFast power ICs that integrate GaN power, sensing and control in a single device, and robust, high-voltage, high-efficiency GeneSiC SiC semiconductors optimized for reliable operation in harsh-environment, high-power designs.

“PCIM is a key event in the power-electronics calendar,” says, Alessandro Squeri, Navitas’ senior director for European sales. “Continuing our ‘Electrify our World’ mission, Navitas’ demonstrations, papers and panel discussions provide critical insight into how next-generation GaN and SiC deliver power-conversion and fast-charging solutions that could reduce global CO2 emissions by as much as six Gigatons per year by 2050.”

During this year’s conference Navitas will participate in the following sessions:

Tuesday 9th May

“GaN Power ICs Drive Efficiency and Size Improvements in BLDC Motor Drive Applications.”,
- 11.40am: GaN Devices Session, Brüssel 1, Alfred Hesener, Senior Director, Industrial Applications
“GaN Power ICs Enable 300cc 700kHz 300W AC-DC Converter.”
- 11.40am: Power IC Session, München 2, Tom Ribarich, Senior Director Strategic Marketing
“GaN-based High-Frequency, High-Power-Density, 2-in-1 Bi-directional OBCM Design for EV Applications.”
- Power Electronics for Electric Cars Poster Session, Foyer, NCC Mitte, Bin Li, Senior Applications Manager, for Minli Jia, Sr. Staff Applications Engineer

Wednesday 10th May

“Wide Bandgap Design with GaN HEMT and Vertical GaN.” (panel)
- 1:05pm, Hall 7, #480, Stephen Oliver, VP Corporate Marketing & Investor Relations

Thursday 11th May

“Reliability and Quality Requirements for SiC and GaN Power Devices.” (panel)
- 12:10pm, Hall 7, #480, Stephen Oliver, VP Corporate Marketing & Investor Relations
“High-Frequency High-Efficiency LLC Module with Planar Matrix Transformer for CRPS Application Using GaN Power IC.”
- 2:20pm, DC-DC Converters Session, Brüssel 1, Bin Li, Senior Applications Manager

To register for PCIM visit: https://pcim.mesago.com/nuernberg/en/exhibition/tickets.html

To schedule a meeting with the Navitas team at PCIM 2023, call +1 844-654-2642, or email info@navitassemi.com.

About Navitas

Navitas Semiconductor is the only pure-play, next-generation power-semiconductor company, founded in 2014. GaNFast power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include mobile, consumer, data center, EV, solar, wind, smart grid, and industrial. Over 185 Navitas patents are issued or pending. Over 75 million GaN units have been shipped with excellent quality performance, and the industry’s first and only 20-year warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.

Navitas and realme Launched World’s First 240W Ultra-Fast Charging Phone at MWC

Joey — Thu, 20 Apr 2023 01:16:11 +0000

Next-gen gallium nitride (GaN) drives ‘Speed to the Max’ SUPERVOOC milestone, with 100% charge in under ten minutes

Torrance, CA – April 3rd, 2023 – Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company, has announced that its next-generation GaNFast technology has been adopted for the ‘in-box’ 240 W ultra-fast charger provided with the recently-announced realme GT3 smartphone.

Launched at this year’s Mobile World Conference (MWC), realme’s GT3 is a powerful and stylish new Android device and the world’s first smartphone to offer the power of 240 W charging. The phone sports a Snapdragon 8+ Gen 1 chipset, features a 6.74 inch 10-bit AMOLED screen with a 144 Hz refresh rate and includes a customizable rear RGB LED rectangle that supports 25 colors.

The SUPERVOOC fast charger included with the GT3 is fully certified by TÜV Rheinland and built around two Navitas NV6138 GaN power ICs in CRM PFC and HFQR flyback topologies. With a form factor of only 57 x 58 x 30 mm (99 cc) and weighing just 173 g, the charger has a power density of 2.42 W/cc and can fully charge the GT3’s 4600 mAh battery in a lightning-fast nine minutes and 30 seconds. A charge of 50% is possible in as little as four minutes, while a quick-shot 30-second charge delivers two hours talk-time.

GaNFast power ICs integrate a high-performance GaN FET with GaN gate-drive to achieve unprecedented high-frequency, high-efficiency operation. Additional GaNSense technology enables real-time, accurate sensing of voltage, current and temperature with autonomous control. Loss-less current sensing eliminates external current-sensing resistors and hot-spots, while increasing system efficiency.

Chase Xu, Vice President of realme, President of realme Global Marketing commented: “With the GT3 we have eliminated battery anxiety by providing the world’s most powerful smartphone-charging solution that delivers the maximum power that USB Type-C will support. Navitas GaNFast ICs featuring GaNSense technology are the key to realizing this world’s first.”

“We would like to congratulate realme on the global launch of the GT3,”said David Carroll, SVP of Global Sales at Navitas. “This ultra-fast-charging milestone, supports our mission to Electrify Our World by helping our clients set fast-charging records and deliver an ultra-portable user experience.”

About realme

realme is a global emerging consumer technology company disrupting the smartphone and AIoT market by making cutting-edge technologies more accessible. It provides a range of smartphones and lifestyle technology devices with premium specs, quality, and trend-setting designs to young consumers at affordable prices.

Established by Sky Li in 2018 and driven by its “Dare to Leap” spirit, realme has become one of the top 5 smartphone players in 30 markets globally in just three years, and realme has entered 61 markets worldwide, including China and Southeast Asia, South Asia, Europe, Australia, the Middle East, Latin America, and Africa, and has a global user base of over 140 million. For more information, please visit www.realme.com.

About Navitas

Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, founded in 2014. GaNFast power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar / energy storage, home appliance / industrial, data center, mobile and consumer. Over 185 Navitas patents are issued or pending. Over 75 million GaN units and 9 million SiC have been shipped, now with the industry’s first and only GaN 20-year warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.

Innoscience Demonstrates the Ubiquitous Presence of GaN at APEC

Joey — Tue, 18 Apr 2023 01:22:55 +0000

The APEC (Applied Power Electronics Conference) was held in Florida, USA from March 19th to 23rd. It is jointly organized by the Institute of Electrical and Electronics Engineers Industrial Applications Society (IEEE-IAS), the Power Electronics Society (PELS), and the Power Sources Manufacturers Association (PSMA). The exhibition is currently the largest and highest-level event in the field of power electronics and power supplies worldwide. Companies and organizations from various countries will showcase new products and technologies related to power electronics, making it an important platform for professional exchanges among electronic industry professionals worldwide.

As a high-tech enterprise that aims to build a global energy ecosystem with high-performance, low-cost silicon-based GaN power solutions, Innoscience showcased various multi-domain application solutions and new products at APEC with the theme of "Fill the world with GaN". The company highlighted three main application scenarios for gallium nitride, which became a major focus at the event.

8 inch GaN-on-Si IDM

In the product exhibition area, Innoscience showcased its silicon-based GaN wafers and GaN chips ranging from 30V to 700V for high, medium and low voltage applications. The company focused on introducing its 40V VGaN bidirectional switch series, SolidGaN half-bridge series, and new Toll/TO package.

（1）The new TO220/TO252 package was based on the InnoGaN planar structure, can achieve better heat dissipation conditions and reduce common-mode noise, making EMI easier to handle.

（2）The Solid GaN products, including the ISG3201 100V high-integration half-bridge GaN IC and the ISG6252 650V half-bridge GaN IC, can simplify peripheral circuits, significantly reduce parasitic inductance in the drive and power circuits, and reduce board space (compared with silicon), making the system more efficient and effectively reducing temperature rise.

（3）Innoscience displayed its industry-leading VGaN bidirectional series product, which adopts a WLCSP package and can replace two Silicon chip with one VGaN chip. The product has been successfully introduced into oppo/realme mobile phone motherboards, saving space on mobile phone PCBA and reducing the temperature during charging, resulting in a more efficient and safer charging method.

InnoGaN in Life

In the consumer field, Innoscience showcased several products at APEC. These included the Realme GT2 phone featuring Innoscience VGaN technology, Anker's 65W full-GaN fast charger, and small-sized fast charging products ranging from 30W to 65W from brands such as Sharge, Baseus, UGREEN, Belkin, and Nubia. Innoscience also exhibited its highly efficient solutions for 30W to 300W GaN fast chargers and adapters, a 200W LED power supply, and a 2kW portable power station to enhance the user experience.

Realme GT 2

The Realme GT2 phone has Innoscience's bidirectional chip (VGaN) built inside, which replaces two SiMOS with one GaN chip, resulting in a 50% reduction in size and higher efficiency.

2KW portable power station

In addition, Innoscience displayed a 2KW portable power station solution designed by Semitronic (Innoscience value-added distributor), using Bridgeless topology and full-bridge LLC topology design, providing a reference for a highly efficient and small-sized portable outdoor energy storage product.

500W Class D

Lastly, Innoscience demonstrated its 500W Class D amplifier solution, developed jointly with its partner, which provides an ultimate audio experience and higher efficiency for audio equipment.

InnoGaN in Datacenter

Innoscience also made a comprehensive layout for data center power supply at APEC. The company can provide customers with a complete GaN power supply solution. In this area, Innoscience showcased various products such as 2KWPSU and 4KW PFC solutions for the AC-to-DC part of PSU power supplies, 420W/600W/1000W power modules for the 48V-to-12V conversion process, as well as Oring, Hotswap, Vcore power supply and other solutions. These solutions aim to improve the power density and efficiency of the power supply chain and reduce system losses by 50%.

2KW Titanium PSU and 4KW PFC

Innoscience showcased a 2KW Titanium PSU and 4KW PFC solution for front-end AC/DC power conversion at APEC. The peak efficiency of the 2KW PSU is up to 96.2%, and the overall efficiency meets the titanium energy efficiency standard, with a power density far exceeding traditional Silicon solutions. This solution meets the higher power density requirements of data center power supply units for cloud computing and artificial intelligence.

1KW 48V-12V DC-DC Modular Power Supply

The company also displayed its 1KW 48V-12V DC-DC modular power supply, which uses Innoscience SolidGaN ISG3201 (with integrated half-bridge and driver) to achieve the best performance in terms of efficiency and size, with a power density of up to 2150 W/in3.

Additionally, Innoscience released Oring, Hotswap, and VCore solutions, providing an efficient, low-loss reference design for GaN solutions throughout the entire chain of data center power supply.

InnoGaN in Automotive

The automotive industry has shown a very positive response to GaN technology, and not long ago, Tesla announced that it would reduce Silicon chips by 75% in its electric vehicles, which could be a good signal for GaN. At APEC, Innoscience showcased products and solutions related to autonomous driving in the automotive electronics area.

Innoscience exhibited a laser radar using Innoscience's 100V low-voltage chip, a 2.4 kW 48V bi-directional DC/DC power module, a 1kW motor drive, and a 150W car charger to comprehensively reduce system losses and enable green travel.

LIDAR System

The LIDAR system featuring Innoscience's 100V GaN chip provides faster and more accurate feedback.

2.4KW 48V-12V Bidirectional DC/DC

The 2.4KW 48V-12V bidirectional DC/DC is used for mild hybrid and energy storage applications, and the Buck full-load efficiency is 1.5% higher than current Silicon solutions.

150W Buck Boost

The high-power compact 150W buck boost used for in-car chargers has good system efficiency and temperature performance.

1KW Motor Drive

The 1KW motor drive uses three Innoscience SolidGaN ISG3201 (with integrated half-bridge and driver) and features a simple design, small size, excellent heat dissipation performance, and a peak efficiency greater than 99%.

Technology Sharing

As a leading 8-inch GaN IDM enterprise, Innoscience's Dr. Denis Marcon and Dr. Kong Pengju were invited to attend three academic conferences. During the conferences, Mr. Chen Min, the Vice President of Innoscience, also attended as the chairman of the "Hybrid/Switched Capacitor Converters" conference and hosted it.

March 21st

On March 21st, Dr. Denis Marcon gave a speech on the topic of "Promoting GaN in the Market." He pointed out that the market already has a good understanding of the performance and applications of gallium nitride, but its price, production capacity, and standardization of package remain major obstacles to its large-scale application. In response to these pain points, Dr. Marcon focused on introducing Innoscience's huge advantages in production capacity and price, as well as the standardized package of Innoscience products at low and high voltage. He used the smartphone market as an example to demonstrate the advantages of GaN in performance and reliability, and pointed out that only Innoscience can currently meet the required production capacity for such a large market.

March 22nd

On March 22nd, Dr. Kong Pengju, the Vice President of Innoscience's product line, gave a technical report on "The applications of GaN in Low Voltage." He analyzed the issues facing the promotion and application of low-voltage gallium nitride products and provided solutions that Innoscience has developed for these issues. He used Innoscience's latest 100V half-bridge integrated ISG3201 as an example to demonstrate the product's advantages in ease of use and performance, and showed test results and data to demonstrate the optimizations made by the Innoscience product team in various aspects.

March 23rd

On March 23rd, Dr. Kong Pengju, the Vice President of Innoscience's product line, also gave a report on the application of GaN in the 48V-12V converter for automotive use. The report targets the mild hybrid electric vehicle market and comprehensively demonstrates the advantages of gallium nitride in this application, using a large amount of test data to illustrate the superior performance of Innoscience's 48V-12V converter. The report highlights Innoscience's V-GaN's huge advantage over silicon devices in this application.

Dr. Lei Feng, Chief Marketing Officer at Innoscience: "GaN is truly everywhere, as we hope to show visitors at APEC. We'll be debuting new products including an integrated SolidGaNTM product, which integrates two 100V low Rdson GaN devices in half bridge and a gate driver into one compact package., We also keep enriching our product offering in industry standard packages (DFN, Toll, QFN), a new TO252 and TO220 family dispels the myth that GaN devices must come in exotic wrappers!" Emphasizing this last point, Innoscience will keep pushing forward the standardization of GaN device packages. Having second sources for parts will further reassure customers and speed the transition to GaN.

During the exhibition, Innoscience showcased a total of 37 GaN application solutions and created three major application scenarios, fully demonstrating the vision of "creating a green, efficient new world with GaN". The company received high attention at the exhibition.

About Innoscience

Innoscience is an Integrated Device Manufacturer (IDM) founded in December 2015 with investment from CMBI, ARM, SK and other prestigious investors. With the development of new technologies, the electric power grid and power electronic systems across the world are undergoing a massive transformation. Their vision is to create an energy ecosystem with effective and low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions. In November 2017, Innoscience first established a mass production 8-inch wafer line for GaN-on-Si devices in Zhuhai. As a cutting-edge GaN technology provider, Innoscience’s 1,400+ employees and over 300 R&D experts are dedicated to delivering high performance and high reliability GaN power devices that can be widely used in diverse applications including cloud computing, electric vehicles (EV) and automotive, portable devices, mobile phones, chargers and adapters.