Introduction

Gallium Nitride (GaN) has emerged as a powerful wide-bandgap semiconductor material, offering advantages such as high frequency, efficiency, and power density. These features make it ideal for high-power electronics. Compared to traditional silicon, GaN boasts a higher electron saturation velocity and breakdown strength, making it more suitable for high-frequency, high-power applications. Additionally, its low conduction resistance, minimal parasitic effects, and thermal stability improve the performance and reliability of power electronic devices.

GaN technology has revolutionized the charging industry, especially with smaller, high-performance chargers. GaN transistors switch faster than traditional silicon MOSFETs, reducing heat and boosting overall efficiency. 

ChargerLAB discovered that Texas Instruments (TI) GaN FETs are used in a 100W fast charger design. This highlights the application of TI’s GaN FET technology in GaN fast-charging adapters.

LMG3622 Overview

The LMG3622 from Texas Instruments is a 650V, 120mΩ GaN power FET designed for switch-mode power supplies. It integrates the FET and gate driver in an 8mm x 5.3mm QFN package, simplifying design and reducing the number of components. 

Texas Instruments’ LMG3622: Powering Efficient GaN Fast Charging-Chargerlab

With low quiescent current and fast startup times, the LMG3622 ensures high-efficiency performance, especially under light loads. Its programmable turn-on slew rate helps control EMI and reduces ringing. The current-sense emulation reduces power loss compared to traditional current-sense resistors, further boosting system efficiency.

Texas Instruments’ LMG3622: Powering Efficient GaN Fast Charging-Chargerlab

For protection, the LMG3622 includes undervoltage lockout, cycle-by-cycle current limiting, and over-temperature protection, with real-time reporting through the FLT pin.

Summary of ChargerLAB

TI’s LMG3622 is a key innovation in GaN fast-charging applications, combining high efficiency, low power loss, and robust protection features in a compact design. Its entry into the GaN market demonstrates the ongoing evolution of power electronics, leading to more powerful, efficient, and compact chargers.

As the GaN market continues to grow, TI’s advancements will play a crucial role in shaping the future of power electronics, bringing better, more reliable solutions for consumers.